By U.A.Bakshi, A.P.Godse
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Additional resources for Analog Electronics
Substrate temperature for the SiH 4 -N 2H4 process and for the SiH4 -NH 3 process. 5% q2 mole" Siti4B Figure 11-22. Dependence of film growth rate. A, mole concentration of N2H4 (SiH 4 mole. conc. 05%); B, mole concentration of SiH 4 (N 2H4 mole. conc. 5%). (34) 27 The growth rate reaches a saturation value above 750°C, changes linearly with the silane concentration in the temperature range between 550° and 10000C, while the dependence on the hydrazine concentration was more complicated becoming gradually independent of the N2H4 concentration at high temperatures.
N70-23899. Silicon Nitride Preparation. S. Patent 3, 226, 194, Dec. 28, 1965. , temperature, composition of reactants, etc. Hence, it is important in specify- ing film property data on silicon nitride to identify the deposition process and conditions; wherever possible, this has been noted in the property data tables in this survey. The physical and electrical properties of bulk silicon nitride have been well known for some time. , Ga, Zn, 02, and In). L. Parr (1) has reviewed the mechanical properties of bulk silicon nitride materials.
51 "5 200 i- ISO ~ o ! Figure 111-5. Dissolution rate of silicon nitride in 49% HF at 24°C as a function of deposition temperature. A: Flow rate of ammonia 20 l/min, flow rate of SiH4 = 2ml/ min. B: Flow rate of ammonia = 40 l/min, flow rate of SiH 4 = 2 ml/min. (22) 60 40 20 1 8 9 Deposition Temperature, 104/T OK 43 Scott and Olmstead (23) went as low as 600°C with the (SiH4/NH3) deposition temperature. They stated that the films deposited between 600 and SOOoC were the most etchable while the etch rate decreased as the deposition temperature was increased beyond SOOoC.
Analog Electronics by U.A.Bakshi, A.P.Godse