By M. Ramamoorty
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Additional info for An Introduction to Thyristors and Their Applications
Te gate drive is required to turn on the device since it is provided internally when the avalanche diode breaks. 1. Because of its very limited negative resistance region [lp (peak point current) is very close to lv (valley point current)], the range of output frequency of a relaxation oscillator using an SUS is very small. The silicon bilateral switch (SBS) is a device which essentially comprises two identical SUS structures, arranged in antiparallel, with one gate. As the name indicates, the device conducts in both directions when the applied voltage breaks the internal avalanche diode.
14 Electrical equivalent of thermal circuit. thcrm~l resistance between the junction and casing is R.. Cc and Rc are THYRISTORS 31 the thermal capacity and thermal resistance, respectively, of the surrounding medium. The heat input is represented by a current source. When the potential of node J is such that the current through Re is equal to the input current, the steady state is reached. The same is the case in respect of node C. The current flowing through Rc corresponds to the heat flow to the surrounding medium.
The gate is used only for external synchronisation or for proper biasing. Since no external gate drive is utilised for turning on the device, the gate terminal can be removed from the SBS structure. The device is then called a diac (or trigger diode). 1. The device exhibits a negative resistance characteristic in both directions when it begins to conduct. This negative resistance region extends over a large range of current. For this reason, the device operates in the relaxation mode over a wide range offrequency.
An Introduction to Thyristors and Their Applications by M. Ramamoorty